Contribución metodológica práctica al diseño, simulación y medida de amplificadores de potencia monolíticos de microondas en tecnología de nitruro de galio

Abstract

Today's communications needs demand systems made of active devices with leading-edge performance over established monolithic technologies, at a reasonable cost and limited circuit complexity. This thesis focuses on the design, electromagnetic simulation and measurement of high-power, high-frequency monolithic integrated amplifiers in gallium nitride technology. Two monolithic amplifiers have been designed, who have been used as a basis for reasoning the correct configuration to be applied in the electromagnetic simulation of their layout. A structured procedure for the construction and simulation of complex integrated circuit layouts with high reliability in the results is also presented. Finally, test fixtures for both fabricated monolithic circuits are presented, which correctly address the thermal management of the high-frequency gallium nitride power amplifiers. Output results show a gain of 18Db with a 3dB ripple from 1 to 39GHz, an adequate input and output impedance match to 50 ohm and an saturated output power level higher than 32dBm from 1 to 37GHz. Consulted bibliography consisted on peer reviewed technical papers, as well as specialiced publications on the field of the microwave monolithic amplifiers.